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| APT50M75JLLU3 ISOTOP(R) Buck chopper MOSFET Power Module D VDSS = 500V RDSon = 75m max @ Tj = 25C ID = 51A @ Tc = 25C Application * AC and DC motor control * Switched Mode Power Supplies Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged * ISOTOP(R) Package (SOT-227) * Very low stray inductance * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Very rugged * Low profile * RoHS Compliant G S A S G D A ISOTOP Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS IFA V IFRMS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Maximum Average Forward Current Duty cycle=0.5 RMS Forward Current (Square wave, 50% duty) Tc = 25C Tc = 80C Tc = 25C A These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. www.microsemi.com 1-8 APT50M75JLLU3 - Rev 1 Tc = 80C Max ratings 500 51 39 204 30 75 290 51 50 2500 30 39 Unit V A V m W A mJ June, 2006 APT50M75JLLU3 All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V Min Tj = 25C Tj = 125C 3 Typ VGS = 10V, ID = 25.5A VGS = VDS, ID = 1mA VGS = 20 V, VDS = 0V Max 100 500 75 5 100 Unit A m V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 51A Resistive Switching VGS = 15V VBus = 250V ID = 51A R G = 0.6 Inductive switching @ 25C VGS = 15V, VBus = 330V ID = 51A, R G = 5 Inductive switching @ 125C VGS = 15V, VBus = 330V ID = 51A, R G = 5 Min Typ 5590 1180 85 123 33 65 10 20 21 5 755 726 1241 846 Max Unit pF nC ns J J www.microsemi.com 2-8 APT50M75JLLU3 - Rev 1 June, 2006 APT50M75JLLU3 Chopper diode ratings and characteristics Symbol VF IRM CT trr Reverse Recovery Time IRRM Qrr trr Qrr IRRM Maximum Reverse Recovery Current Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 30A VR = 400V di/dt =1000A/s IF = 30A VR = 400V di/dt =200A/s Characteristic Diode Forward Voltage Maximum Reverse Leakage Current Junction Capacitance Reverse Recovery Time Test Conditions IF = 30A IF = 60A IF = 30A VR = 600V VR = 600V VR = 200V IF=1A,VR=30V di/dt =100A/s Min Typ 1.6 1.9 1.4 44 Tj = 25C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 125C 23 85 160 4 8 130 700 70 1300 30 ns Max 1.8 250 500 Unit V A pF Tj = 125C Tj = 25C Tj = 125C A nC ns nC A Thermal and package characteristics Symbol RthJC RthJA VISOL TJ,TSTG TL Torque Wt Characteristic Junction to Case Thermal Resistance Junction to Ambient (IGBT & Diode) RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Min MOSFET Diode 2500 -55 Typ Max 0.27 1.21 20 150 300 1.5 Unit C/W V C N.m g Storage Temperature Range Max Lead Temp for Soldering:0.063" from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight 29.2 Typical MOSFET Performance Curve www.microsemi.com 3-8 APT50M75JLLU3 - Rev 1 June, 2006 APT50M75JLLU3 www.microsemi.com 4-8 APT50M75JLLU3 - Rev 1 June, 2006 APT50M75JLLU3 www.microsemi.com 5-8 APT50M75JLLU3 - Rev 1 June, 2006 APT50M75JLLU3 Typical Diode Performance Curve www.microsemi.com 6-8 APT50M75JLLU3 - Rev 1 June, 2006 APT50M75JLLU3 www.microsemi.com 7-8 APT50M75JLLU3 - Rev 1 June, 2006 APT50M75JLLU3 SOT-227 (ISOTOP(R)) Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 1.95 (.077) 2.14 (.084) Anode Drain * Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. Source Dimensions in Millimeters and (Inches) Gate June, 2006 8-8 APT50M75JLLU3 - Rev 1 ISOTOP(R) is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com |
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